| PART |
Description |
Maker |
| RURG30120 FN3399 |
30A, 1200V Ultrafast Diode(30A, 1200V 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
30A/ 1200V Ultrafast Diode
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RURD4120S RURD4120 UR4120 RURD4120S9A |
4A, 1200V UltraFast Diode; ; No of Pins: 2; Container: Tape & Reel 4 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252
4A, 1200V Ultrafast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PH30KD IRG4PH30 |
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
| HFA16PB120 |
1200V 16A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
Ultrafast, Soft Recovery Diode HEXFRED
HEXFREDTM Ultrafast, Soft Recovery Diode
Ultrafast/ Soft Recovery Diode HEXFRED
XC95216-15HQ208I - NOT RECOMMENDED for NEW DESIGN 超快，软恢复二极管HEXFRED二极
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4PH50KD IRG4PH50KD-E |
45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| HFA06TB120 HFB06TB120 |
Ultrafast/ Soft Recovery Diode
Ultrafast, Soft Recovery Diode
1200V 6A HEXFRED Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
|
| RURP8120 |
8A, 1200V Ultrafast Diode
|
Fairchild Semiconductor
|
| RURP8120CC |
8A/ 1200V Ultrafast Dual Diode
8A, 1200V Ultrafast Dual Diode
|
INTERSIL[Intersil Corporation]
|
| HFA40HF120 |
1200V 11A Hi-Rel Ultra-Fast Discrete Diode in a SMD-1 package
HEXFRED TM Ultrafast, Soft Recovery Diode
|
International Rectifier
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| LSL9R30120G2 ISL9R30120G2 ISL9R30120G2NL |
30A, 1200V STEALTH DIODE, TO247 PACKAGE
30A, 1200V Stealth⑩ Diode
ISL9R30120G2
30A, 1200V Stealth?/a> Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
